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CP310-2N3114
150V,200mA,800mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Case Type: CHIP,WAFFLE
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 50 mA
IB = 5 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 100 V
Test Conditions
VCB = 100 V
TA = 150 °C
Test Conditions
IC = 30 mA
Test Conditions
IC = 50 mA
IB = 5 mA
Test Conditions
VCE = 10 V
IC = 30 mA
f = 20 MHz
Test Conditions
VCE = 10 V
IC = 100 µA
Test Conditions
VCE = 10 V
IC = 30 mA
Test Conditions
VCE = 10 V
IC = 30 mA
TA = -55 °C
Test Conditions
IE = 100 µA
Test Conditions
VEB = 4 V
Test Conditions
VEB = 0.5 V
f = 140 kHz
Test Conditions
VCB = 20 V
f = 140 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP310-2N3114-CT | WafflePack@400 | Active | 150V,200mA,800mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP310-2N3114_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Spice Model:Spice Model CP310 | Spice Model |