Home / Products / Die Solutions / Transistors / General Purpose Transistors / CP310-2N6517

CP310-2N6517

350V,500mA,625mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Back to Top Specifications Ordering Resources

Technical Specifications

Similar Products with Selected Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
750 mV
Base-Emitter Saturation Voltage (VBE(SAT))
850 mV
Base-Emitter Saturation Voltage (VBE(SAT))
900 mV
Collector-Base Breakdown Voltage (BVCBO)
350 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage (VCBO)
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current (IB)
250 mA
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
40 — 200 MHz
DC Current Gain (hFE)
20
DC Current Gain (hFE)
30
DC Current Gain (hFE)
30 — 200
DC Current Gain (hFE)
20 — 200
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
3.5 µs
Turn On Time (ton)
200 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP310-2N6517-CT WafflePack@400 Active 350V,500mA,625mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP310-2N6517_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:WAFER THICKNESS REDUCTION Process Change Notice