CP310-MJE340

300V,500mA,20.8W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Collector-Base Cutoff Current (I_CBO)

100 µA

Collector-Base Voltage (V_CBO)

300 V

Collector-Emitter Breakdown Voltage (BV_CEO)

300 V

Collector-Emitter Voltage (V_CEO)

300 V

Continuous Collector Current (I_C)

500 mA

DC Current Gain (h_FE)

30 — 240

Emitter-Base Cutoff Current (I_EBO)

100 µA

Emitter-Base Voltage (V_EBO)

3 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

20.8 W

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP310-MJE340-CT	WafflePack@400		Active	300V,500mA,20.8W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)	EAR99	8541.29.0040	PBFREE
CP310-MJE340-WN	Wafer		Active	300V,500mA,20.8W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)	EAR99	8541.29.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Copper Bonding Wire	Analytical Test Report
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Analytical Test Report:Tin Plating	Analytical Test Report
CP310-MJE340_WPD.PDF	Device Datasheet
Material Composition:TO-126	Material Composition
Package Detail Document:TO-126	Package Detail Document
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-126 Package Reliability	Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.