CP310-MJE3439
350V,300mA,15W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Case Type: WAFER
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 50 mA
VCE = 10 V
Test Conditions
IC = 50 mA
IB = 4 mA
Test Conditions
VCB = 350 V
Test Conditions
IC = 5 mA
Test Conditions
VCE = 300 V
Test Conditions
VCE = 450 V
VBE(OFF) = 1.5 V
Test Conditions
IC = 50 mA
IB = 4 mA
Test Conditions
VCE = 10 V
IC = 50 mA
f = 5 MHz
Test Conditions
VCE = 10 V
IC = 2 mA
Test Conditions
VCE = 10 V
IC = 20 mA
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 1 MHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP310-MJE3439-WN | Wafer | Active | 350V,300mA,15W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:TVS Die | Analytical Test Report |
| Analytical Test Report:Wafer Rectifier | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP310.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:Wafer Diameter Change from 4" | Process Change Notice |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Spice Model:Spice Model CP310 | Spice Model |
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