CP314V-MPS650
40V,2A,625mW Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)
Case Type: CHIP,WAFFLE
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 1 A
VCE = 2 V
Test Conditions
IC = 1 A
IB = 100 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 60 V
Test Conditions
IC = 10 mA
Test Conditions
IC = 1 A
IB = 100 mA
Test Conditions
IC = 2 A
IB = 200 mA
Test Conditions
VCE = 5 V
IC = 50 mA
f = 100 MHz
Test Conditions
VCE = 2 V
IC = 50 mA
Test Conditions
VCE = 2 V
IC = 500 mA
Test Conditions
VCE = 2 V
IC = 1 A
Test Conditions
VCE = 2 V
IC = 2 A
Test Conditions
IE = 10 µA
Test Conditions
VEB = 4 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP314V-MPS650-CM200 | WafflePack@200 | Special Order Item | 40V,2A,625mW Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE | |
| CP314V-MPS650-CT | WafflePack@400 | Active | 40V,2A,625mW Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE | |
| CP314V-MPS650-WN | Wafer | Active | 40V,2A,625mW Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| CP314V-MPS650_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS | Product EOL Notice |
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