CP317-2N2857

15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Amplifier Power Gain (Gpe)
12.5 — 19 dB
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Time Constant (rb'Cc)
4 — 15 ps
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
40 mA
Current Gain-Bandwidth Product (fT)
1000 — 1900 MHz
DC Current Gain (hFE)
30 — 150
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage (VEBO)
2.5 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4.5 dB
Output Capacitance (Cob)
1 pF
Power Dissipation (PD)
200 mW
Power Dissipation (PD)
300 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP317-2N2857-CT WafflePack@400 Discontinued 15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP317.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:WAFER THICKNESS REDUCTION Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice
Spice Model:Spice Model CP317 Spice Model

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