CP317X-2N5770

15V,50mA,625mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Amplifier Power Gain (Gpe)
15 dB
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector Efficiency (η)
25 %
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
900 MHz
DC Current Gain (hFE)
20
DC Current Gain (hFE)
50 — 200
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage (VEBO)
3 V
Input Capacitance (Cib)
2 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
1.7 pF
Power Dissipation (PD)
625 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP317X-2N5770-CT WafflePack@400 Active 15V,50mA,625mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP317X-2N5770_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document