CP325V-MJE181
60V,3A,1.5W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)
Case Type: WAFER
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 500 mA
VCE = 1 V
Test Conditions
IC = 1.5 A
IB = 150 mA
Test Conditions
IC = 3 A
IB = 600 mA
Test Conditions
VCB = 80 V
Test Conditions
VCB = 80 V
TA = 150 °C
Test Conditions
IC = 10 mA
Test Conditions
IC = 500 mA
IB = 50 mA
Test Conditions
IC = 1.5 A
IB = 150 mA
Test Conditions
IC = 3 A
IB = 600 mA
Test Conditions
VCE = 10 V
IC = 100 mA
f = 10 MHz
Test Conditions
VCE = 1 V
IC = 100 mA
Test Conditions
VCE = 1 V
IC = 500 mA
Test Conditions
VCE = 1 V
IC = 1.5 A
Test Conditions
VEB = 7 V
Test Conditions
VCB = 10 V
f = 100 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP325V-MJE181-WN | Wafer | Active | 60V,3A,1.5W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:TVS Die | Analytical Test Report |
| Analytical Test Report:Wafer Rectifier | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP325V.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:Wafer Diameter Change from 4" | Process Change Notice |
| Spice Model:Spice Model CP325 | Spice Model |
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