CP348-2N5154

80V,5A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
1.45 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.45 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Collector-Emitter Breakdown Voltage (BVCES)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
1 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCES)
100 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
5 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
50
DC Current Gain (hFE)
70 — 200
DC Current Gain (hFE)
40
DC Current Gain (hFE)
35
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
1 µA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation (PD)
1 W
Power Dissipation (PD)
10 W
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP348-2N5154-CT WafflePack@100 Active 80V,5A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP348-2N5154_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Spice Model:Spice Model CP348 Spice Model