CP388X-2N5088

30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
800 mV
Collector-Base Breakdown Voltage (BVCBO)
35 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage (VCBO)
35 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
300 — 900
DC Current Gain (hFE)
350
DC Current Gain (hFE)
300
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
4.5 V
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
4 pF
Power Dissipation (PD)
625 mW
Small Signal Current Gain (hfe)
350 — 1400
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W
Thermal Resistance Junction-Case (ΘJC)
83.3 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP388X-2N5088-CT WafflePack@400 Active 30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP388X-2N5088-WN Wafer Active 30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP388X-2N5088_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CP188 and CP588 replaced by Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice

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