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CP388X-BC107A

45V,200mA,600mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Device Datasheet

Technical Specifications

Base-Emitter On Voltage (V_BE(ON))

550 — 700 mV

Base-Emitter On Voltage (V_BE(ON))

770 mV

Base-Emitter Saturation Voltage (V_BE(SAT))

830 mV

(700 mV Typical)

Base-Emitter Saturation Voltage (V_BE(SAT))

1.05 V

(1 V Typical)

Collector-Base Cutoff Current (I_CBO)

15 nA

Collector-Base Cutoff Current (I_CBO)

4 µA

Collector-Base Voltage (V_CBO)

50 V

Collector-Emitter Breakdown Voltage (BV_CEO)

45 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

250 mV

Collector-Emitter Saturation Voltage (V_CE(SAT))

600 mV

Collector-Emitter Voltage (V_CEO)

45 V

Continuous Collector Current (I_C)

200 mA

Current Gain-Bandwidth Product (f_T)

150 MHz

DC Current Gain (h_FE)

110 — 220

Emitter-Base Breakdown Voltage (BV_EBO)

6 V

Emitter-Base Voltage (V_EBO)

6 V

Junction Temperature (T_j)

-65 — 200 °C

Noise Figure (NF)

10 dB

Output Capacitance (C_ob)

4.5 pF

Power Dissipation (P_D)

600 mW

Small Signal Current Gain (h_fe)

125 — 260

Storage Temperature (T_stg)

-65 — 200 °C

Thermal Resistance Junction-Case (Θ_JC)

175 °C/W

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP388X-BC107A-CT	WafflePack@400		Active	45V,200mA,600mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)	EAR99	8541.21.0040	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP388X-BC107A_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document