CP388X-MPSA18

45V,200mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
700 mV
Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage (VCBO)
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
200 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
400
DC Current Gain (hFE)
500
DC Current Gain (hFE)
500
DC Current Gain (hFE)
500 — 1500
Emitter-Base Breakdown Voltage (BVEBO)
6.5 V
Emitter-Base Voltage (VEBO)
6.5 V
Input Capacitance (Cib)
6.5 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
1.5 dB
Output Capacitance (Cob)
3 pF
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP388X-MPSA18-CT WafflePack@400 Active 45V,200mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP388X-MPSA18-WN Wafer Active 45V,200mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP388X.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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