CP392V-MPS6513

30V,100mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Collector-Base Cutoff Current (I_CBO)

50 nA

Collector-Base Voltage (V_CBO)

40 V

Collector-Emitter Breakdown Voltage (BV_CEO)

30 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

500 mV

Collector-Emitter Voltage (V_CEO)

30 V

Continuous Collector Current (I_C)

100 mA

DC Current Gain (h_FE)

90 — 180

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

4 V

Emitter-Base Voltage (V_EBO)

4 V

Junction Temperature (T_j)

-65 — 150 °C

Output Capacitance (C_ob)

3.5 pF

Power Dissipation (P_D)

625 mW

Power Dissipation (P_D)

1.5 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

200 °C/W

Thermal Resistance Junction-Case (Θ_JC)

83.3 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP392V-MPS6513-CT	WafflePack@400		Active	30V,100mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)	EAR99	8541.21.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP392V-MPS6513_WPD.pdf	Device Datasheet
Package Detail Document:WAFER	Package Detail Document