CP396V-2N2369A

15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
700 — 850 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.15 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
400 nA
Collector-Base Cutoff Current (ICBO)
30 µA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCES)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCES)
40 V
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
200 mA
Current Gain-Bandwidth Product (fT)
500 MHz
DC Current Gain (hFE)
40 — 120
DC Current Gain (hFE)
20
DC Current Gain (hFE)
30
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Voltage (VEBO)
4.5 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
4 pF
Peak Collector Current (ICM)
500 mA
Power Dissipation (PD)
360 mW
Power Dissipation (PD)
1.2 W
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
13 ns
Thermal Resistance Junction-Ambient (ΘJA)
486 °C/W
Thermal Resistance Junction-Case (ΘJC)
146 °C/W
Turn Off Time (toff)
18 ns
Turn On Time (ton)
12 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP396V-2N2369A-CM WafflePack@400 Active 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP396V-2N2369A-CT WafflePack@400 Active 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP396V-2N2369A-CT20 WafflePack@20 Special Order Item 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP396V-2N2369A-WN Wafer Active 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP396V-2N2369A_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CP207 replaced by CP396V Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice
Spice Model:Spice Model CP207 Spice Model

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