CP681-MPSH81

20V,50mA,350mW Bare die,15.000 X 15.000 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
900 mV
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
600 MHz
DC Current Gain (hFE)
60
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
3 V
Input Capacitance (Cib)
0.65 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
0.85 pF
Power Dissipation (PD)
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP681-MPSH81-CM WafflePack@400 Discontinued 20V,50mA,350mW Bare die,15.000 X 15.000 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP681_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:CP681 wafer process including Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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