CP704V-CMPT8599

80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
600 — 800 mV
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
100
DC Current Gain (hFE)
75
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
4.5 pF
Power Dissipation (PD)
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP704V-CMPT8599-CT WafflePack@400 Active 80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP704V-CMPT8599_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document