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CP705V-BC327-25

45V,500mA,625mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter On Voltage (VBE(ON))
1.2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
5 µA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
0.7 V
Collector-Emitter Voltage (VCEO)
45 V
Continuous Base Current (IB)
100 mA
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
160 — 400
DC Current Gain (hFE)
40
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Base Current (IBM)
200 mA
Peak Collector Current (ICM)
1 A
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP705V-BC327-25-CT WafflePack@400 Active 45V,500mA,625mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE

Resources

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CP705V_WPD.PDF Device Datasheet
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data