CP710V-2N5416

300V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Breakdown Voltage (BVCER)
350 V
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Voltage (VCEO)
300 V
Continuous Base Current (IB)
500 mA
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30 — 120
Emitter-Base Cutoff Current (IEBO)
20 µA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
15 pF
Power Dissipation (PD)
1 W
Second Breakdown Collector Current (Is/b)
100 mA
Small Signal Current Gain (hfe)
25
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP710V-2N5416-CT WafflePack@400 Active 300V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE
CP710V-2N5416-WN Wafer Active 300V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
CP710V-2N5416_WPD.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N5416 Spice Model

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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