CP710V-BC393
180V,100mA,.4W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Case Type: WAFER
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 10 mA
IB = 1 mA
Test Conditions
IC = 10 µA
Test Conditions
VCB = 100 V
Test Conditions
VCB = 100 V
TA = 150 °C
Test Conditions
IC = 2 mA
Test Conditions
IC = 10 mA
IB = 1 mA
Test Conditions
VCE = 10 V
IC = 10 mA
f = 10 MHz
Test Conditions
VCE = 10 V
IC = 10 mA
Test Conditions
IE = 10 µA
Test Conditions
VCB = 10 V
f = 1 MHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP710V-BC393-WN | Wafer | Active | 180V,100mA,.4W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:TVS Die | Analytical Test Report |
| Analytical Test Report:Wafer Rectifier | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP710V-BC393_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CP710V PROCESS | Process Change Notice |
Product Support
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Design Support
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