CP710V-CJD350

300V,500mA,15W Bare die,25.980 X 25.980 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (V_BE(ON))

2 V

Collector-Base Cutoff Current (I_CBO)

100 µA

Collector-Base Voltage (V_CBO)

300 V

Collector-Emitter Breakdown Voltage (BV_CEO)

300 V

Collector-Emitter Cutoff Current (I_CEO)

100 µA

Collector-Emitter Saturation Voltage (V_CE(SAT))

2.6 V

Collector-Emitter Voltage (V_CEO)

300 V

Continuous Collector Current (I_C)

500 mA

Current Gain-Bandwidth Product (f_T)

10 MHz

DC Current Gain (h_FE)

30 — 240

Emitter-Base Cutoff Current (I_EBO)

100 µA

Emitter-Base Voltage (V_EBO)

3 V

Junction Temperature (T_j)

-65 — 150 °C

Peak Collector Current (I_CM)

750 mA

Power Dissipation (P_D)

15 W

Power Dissipation (P_D)

1.56 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

80.1 °C/W

Thermal Resistance Junction-Case (Θ_JC)

8.33 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP710V-CJD350-CT	WafflePack@400		Active	300V,500mA,15W Bare die,25.980 X 25.980 mils,Transistor-Bipolar Power (>1A)	EAR99	8541.29.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP710V-CJD350_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CP710V PROCESS	Process Change Notice