CP716-CMPT5401

150V,600mA,350mW Bare die,19.685 X 19.685 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector-Base Breakdown Voltage (BVCBO)
160 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
160 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
150 V
Continuous Collector Current (IC)
600 mA
Current Gain-Bandwidth Product (fT)
100 — 300 MHz
DC Current Gain (hFE)
50
DC Current Gain (hFE)
60 — 240
DC Current Gain (hFE)
50
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
350 mW
Small Signal Current Gain (hfe)
40 — 200
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP716-CMPT5401-CT WafflePack@400 Discontinued 150V,600mA,350mW Bare die,19.685 X 19.685 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP716.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:WAFER THICKNESS REDUCTION Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice
Spice Model:Spice Model CP716 Spice Model

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