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CP734V-CMPT404A

35V,150mA,350mW Bare die,31.496 X 31.496 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Device Datasheet

Technical Specifications

Base-Emitter Saturation Voltage (V_BE(SAT))

850 mV

Base-Emitter Saturation Voltage (V_BE(SAT))

1 V

Collector-Base Breakdown Voltage (BV_CBO)

40 V

Collector-Base Cutoff Current (I_CBO)

100 nA

Collector-Base Voltage (V_CBO)

40 V

Collector-Emitter Breakdown Voltage (BV_CEO)

35 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

150 mV

Collector-Emitter Saturation Voltage (V_CE(SAT))

200 mV

Collector-Emitter Voltage (V_CEO)

35 V

Continuous Collector Current (I_C)

150 mA

DC Current Gain (h_FE)

100 — 400

Delay Time (t_d)

150 ns

Emitter-Base Breakdown Voltage (BV_EBO)

25 V

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

25 V

Fall Time (t_f)

750 ns

Junction Temperature (T_j)

-65 — 150 °C

Output Capacitance (C_ob)

40 pF

Power Dissipation (P_D)

350 mW

Rise Time (t_r)

400 ns

Storage Temperature (T_stg)

-65 — 150 °C

Storage Time (t_s)

3 µs

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP734V-CMPT404A-CT	WafflePack@400		Active	35V,150mA,350mW Bare die,31.496 X 31.496 mils,Transistor-Small Signal (<=1A)	EAR99	8541.21.0040	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
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Analytical Test Report:Wafer/Die	Analytical Test Report
CP734V-CMPT404A_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document