Home / Products / Die Solutions / Transistors / General Purpose Transistors / CP740V-2N5367

CP740V-2N5367

40V,300mA,625mW Bare die,22.047 X 22.047 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Back to Top Specifications Ordering Resources

Technical Specifications

Similar Products with Selected Specifications
Base-Emitter On Voltage (VBE(ON))
500 — 800 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
100 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
300 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
200
DC Current Gain (hFE)
250 — 500
DC Current Gain (hFE)
75
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
4 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
700 mA
Power Dissipation (PD)
625 mW
Small Signal Current Gain (hfe)
200 — 750
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP740V-2N5367-CT WafflePack@400 Active 40V,300mA,625mW Bare die,22.047 X 22.047 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP740V-2N5367_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document