CP788X-2N2605

45V,30mA,400mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
700 — 900 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICES)
10 nA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
30 mA
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
20
DC Current Gain (hFE)
150
DC Current Gain (hFE)
600
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage (VEBO)
6 V
Input Impedance Common Base (hib)
25 — 35 Ω
Input Impedance Common Emitter (hie)
200 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Admittance Common Base (hob)
1 µS
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
400 mW
Small Signal Current Gain (hfe)
150 — 600
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
438 °C/W
Voltage Feedback Ratio Common Base (hrb)
1 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP788X-2N2605-CT WafflePack@400 Active 45V,30mA,400mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

CP788X-2N2605_WPD.PDF Device Datasheet
Material Composition:TO-46 Material Composition
Package Detail Document:TO-46 Package Detail Document
Product EOL Notice:TO-46 Transistors Product EOL Notice