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CP383X-CMPT3820

Bare die,26.000 X 26.000 mils,Low VCE(sat) Transistor

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter On Voltage (VBE(ON))
900 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
115 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
280 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current (IB)
300 mA
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
200
DC Current Gain (hFE)
200
DC Current Gain (hFE)
100
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current (ICM)
2 A
Power Dissipation (PD)
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP383X-CMPT3820-CM WafflePack@400 Active Bare die,26.000 X 26.000 mils,Low VCE(sat) Transistor EAR99 8541.21.0040 PBFREE
CP383X-CMPT3820-CT WafflePack@400 Active Bare die,26.000 X 26.000 mils,Low VCE(sat) Transistor EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP383X_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document