CP384X-CXT3090L

15V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
50 µV

(30 µV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV

(60 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV

(85 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV

(145 mV Typical)

Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
3 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
200
DC Current Gain (hFE)
200
DC Current Gain (hFE)
150
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
100 pF
Peak Collector Current (ICM)
5 A
Power Dissipation (PD)
1.2 W
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Ambient (ΘJA)
125 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP384X-CXT3090L-CT WafflePack@400 Active 15V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP384X-CXT3090L_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document