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CBAT54C

Surface mount Diode-Schottky (<1A) Dual: Common Cathode

Case Type: SOT-23

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Technical Specifications

Similar Products with Selected Specifications
Continuous Forward Current (IF)
200 mA
Continuous Reverse Voltage (VR)
30 V
Diode Capacitance (Cd)
10 pF
Forward Voltage (VF)
240 mV
Forward Voltage (VF)
320 mV
Forward Voltage (VF)
400 mV
Forward Voltage (VF)
500 mV
Forward Voltage (VF)
800 mV
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
600 mA
Peak Repetitive Forward Current (IFRM)
300 mA
Power Dissipation (PD)
350 mW
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CBAT54C BK Box@3,500 Active Surface mount Diode-Schottky (<1A) Dual: Common Cathode EAR99 8541.10.0070 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
CBAT54.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:All Switching, Schottky and Process Change Notice
Process Change Notice:Copper Wire Bonding Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Spice Model:Spice Model CBAT54C Spice Model
Step File 3D Object:SOT-23 Step File 3D Object

Product Support

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Design Support

Contact Design Support

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  • Free quick ship samples (2nd day air)
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  • SPICE models
  • Custom electrical curves
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  • Up-screening capabilities
  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development