1N457A

200mA,70V Through-Hole Diode-Low Leakage Single

Case Type: DO-35

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Continuous Reverse Voltage (V_R)

60 V

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

6 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Reverse Voltage (V_RRM)

70 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

70 V

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
1N457A BK	Box@2,500		Discontinued	200mA,70V Through-Hole Diode-Low Leakage Single	EAR99	8541.10.0070	PBFREE
1N457A TR	Tape & Reel@10,000		Discontinued	200mA,70V Through-Hole Diode-Low Leakage Single	EAR99	8541.10.0070	PBFREE


Item	Type
No matching documents found.
1N457A.PDF	Device Datasheet
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Product EOL Notice:1N4370A	Product EOL Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.