CN645

400mA,225V Through-Hole Diode-Switching Single

Case Type: DO-41SP

Average Forward Current (IO)
400 mA
Average Forward Current (IO)
150 mA
Forward Voltage (VF)
1 V
Junction Capacitance (CJ)
11 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
3 A
Peak Repetitive Reverse Voltage (VRRM)
225 V
Power Dissipation (PD)
600 mW
Reverse Breakdown Voltage (BVR)
275 V
Reverse Voltage Leakage Current (IR)
200 nA
Reverse Voltage Leakage Current (IR)
15 µA
Storage Temperature (Tstg)
-65 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CN645 BK Box@2,000 Discontinued 400mA,225V Through-Hole Diode-Switching Single EAR99 8541.10.0070 PBFREE
CN645 TR Tape & Reel@5,000 Discontinued 400mA,225V Through-Hole Diode-Switching Single EAR99 8541.10.0070 PBFREE

Resources

Analytical Test Report:Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:INK Analytical Test Report
CN645_SERIES.PDF Device Datasheet
Material Composition:DO-41SP Epoxy Material Composition
Product EOL Notice:CN645 / CN649 Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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