CN649

400mA,600V Through-Hole Diode-Switching Single

Case Type: DO-41SP

Average Forward Current (I_O)

400 mA

Average Forward Current (I_O)

150 mA

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

11 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

3 A

Peak Repetitive Reverse Voltage (V_RRM)

600 V

Power Dissipation (P_D)

600 mW

Reverse Breakdown Voltage (B_VR)

720 V

Reverse Voltage Leakage Current (I_R)

200 nA

Reverse Voltage Leakage Current (I_R)

25 µA

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CN649 BK	Box@2,000		Discontinued	400mA,600V Through-Hole Diode-Switching Single	EAR99	8541.10.0070	PBFREE
CN649 TR	Tape & Reel@5,000		Discontinued	400mA,600V Through-Hole Diode-Switching Single	EAR99	8541.10.0070	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
CN645_SERIES.PDF	Device Datasheet
Material Composition:DO-41SP Epoxy	Material Composition
Product EOL Notice:CN645 / CN649	Product EOL Notice