CDFM10-600N

10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current

Case Type: DFN5X6

Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
3 pF
Continuous Drain Current (ID)
10 A
Continuous Source Current (Body Diode) (IS)
10 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage (VDS)
600 V
Fall Time (tf)
25 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V
Gate-Drain Charge (Qgd)
12 nC
Gate-Source Charge (Qgs)
6 nC
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
40 A
Maximum Pulsed Source Current (ISM)
40 A
Rise Time (tr)
28 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.4 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
28 nC
Turn-off Delay Time (tOFF)
40 ns
Turn-on Delay Time (tON)
13 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDFM10-600N BK Box@200 Active 10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE
CDFM10-600N TR13 Tape & Reel@5,000 Active 10A,600V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE

Resources

Material Composition:DFN5X6 Material Composition
Package Detail Document:DFN5X6 Package Detail Document

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Supply management (Customer portals)
  • Inventory bonding
  • Consolidated shipping options
  • Custom bar coding for shipments
  • Custom product packing

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Free quick ship samples (2nd day air)
  • Online technical data and parametric search
  • SPICE models
  • Custom electrical curves
  • Environmental regulation compliance
  • Customer specific screening
  • Up-screening capabilities
  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development