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CDM22011-600LRFP

11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS

Case Type: TO-220FP

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Technical Specifications

Similar Products with Selected Specifications
Body Diode Reverse Recovery (trr)
315 ns
Body Diode Stored Charge (Qrr)
4 µC
Common Source Input Capacitance (Ciss)
763 pF
Common Source Output Capacitance (Coss)
52 pF
Common Source Reverse Transfer Capacitance (Crss)
2.76 pF
Continuous Drain Current (ID)
11 A
Continuous Source Current (Body Diode) (IS)
11 A
Diode Forward On Voltage (VSD)
1.4 V

(0.92 V Typical)

Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage (VDS)
600 V
Fall Time (tf)
23 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V

(3 V Typical)

Gate-Drain Charge (Qgd)
11.31 nC
Gate-Source Charge (Qgs)
4.45 nC
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
44 A
Maximum Pulsed Source Current (ISM)
44 A
Power Dissipation (PD)
25 W
Rise Time (tr)
27 ns
Saturation Drain Current (IDSS)
1 µA

(0.047 µA Typical)

Single Pulse Avalanche Energy (EAS)
280 mJ
Static Drain-Source On Resistance (rDS(ON))
0.36 Ω

(0.3 Ω Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
120 °C/W
Thermal Resistance Junction-Case (ΘJC)
5 °C/W
Total Gate Charge (Qg)
23.05 nC
Turn-off Delay Time (tOFF)
37 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDM22011-600LRFP Sleeve@50 Active 11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS EAR99 8541.29.0095 PBFREE
CDM22011-600LRFP SL Sleeve@50 Active 11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS EAR99 8541.29.0095 PBFREE

Resources

Item Type
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
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Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Ni added Al Bond Wire Analytical Test Report
Analytical Test Report:Plating Analytical Test Report
Analytical Test Report:Pure Tin Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CDM22011-600LRFP.PDF Device Datasheet
Package Detail Document:TO-220FP Package Detail Document
Process Change Notice:CP399 REPLACES CP391 Process Change Notice
Product Brief:600V-700V UltraMOS MOSFETs Product Brief
Product Brief:PB HV MOSFET Product Brief
Spice Model:Spice Model CDM22011-600LRFP Spice Model

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