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CEDM8001VL

100mA,20V Surface mount MOSFET P-Channel Enhancement Mode

Case Type: SOT-883VL

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
45 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
15 pF
Continuous Drain Current (ID)
100 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1 µA
Gate Leakage Current, Reverse (IGSSR)
1 µA
Gate Threshold Voltage (VGS(th))
0.6 — 1.1 V
Gate-Drain Charge (Qgd)
0.181 nC
Gate-Source Charge (Qgs)
0.158 nC
Gate-Source Voltage (VGS)
10 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
200 mA
Power Dissipation (PD)
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
8 Ω

(1.9 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
12 Ω

(2.4 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
45 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.658 nC
Turn Off Time (toff)
80 ns
Turn On Time (ton)
35 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CEDM8001VL BK Box@5,000 Discontinued 100mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 PBFREE
CEDM8001VL TR Tape & Reel@8,000 Discontinued 100mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 TIN

Resources

Item Type
CEDM8001VL.PDF Device Datasheet
Material Composition:SOT-883VL Material Composition
Package Detail Document:SOT-883VL Package Detail Document
Product EOL Notice:SOT-883VL CASE Product EOL Notice
Spice Model:Spice Model CEDM8001VL Spice Model

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Design Support

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  • Free quick ship samples (2nd day air)
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  • SPICE models
  • Custom electrical curves
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  • Custom electrical curves
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development