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CEDM8004VL

450mA,30V Surface mount MOSFET P-Channel Enhancement Mode

Case Type: SOT-883VL

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
55 pF

(45 pF Typical)

Common Source Output Capacitance (Coss)
15 pF

(8.5 pF Typical)

Common Source Reverse Transfer Capacitance (Crss)
10 pF

(8.9 pF Typical)

Continuous Drain Current (ID)
450 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage (VDS)
30 V
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3 µA
Gate Leakage Current, Reverse (IGSSR)
3 µA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω

(1 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
2 Ω

(1.6 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
3.3 Ω

(2.6 Ω Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.88 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CEDM8004VL TR Tape & Reel@8,000 Discontinued 450mA,30V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 TIN

Resources

Item Type
CEDM8004VL.PDF Device Datasheet
Material Composition:SOT-883VL Material Composition
Package Detail Document:SOT-883VL Package Detail Document
Product EOL Notice:SOT-883VL CASE Product EOL Notice
Spice Model:Spice Model CEDM8004VL Spice Model

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