Home / Products / Semiconductors / MOSFETs/JFETs / MOSFETs / CMLDM7585

CMLDM7585

Surface mount MOSFET 650mA,20V Dual: N-Channel/P-Channel MOSFET&650mA,20V

Case Type: SOT-563

Back to Top Specifications Ordering Resources

Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
100 pF
Common Source Input Capacitance (Ciss)
100 pF
Common Source Output Capacitance (Coss)
16 pF
Common Source Output Capacitance (Coss)
21 pF
Common Source Reverse Transfer Capacitance (Crss)
18 pF
Common Source Reverse Transfer Capacitance (Crss)
25 pF
Continuous Drain Current (ID)
650 mA
Continuous Drain Current (ID)
650 mA
Diode Forward On Voltage (VSD)
1.1 V
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
200 mS
Forward Transconductance (gFS)
1 S
Gate Leakage Current, Forward (IGSSF)
1 µA
Gate Leakage Current, Forward (IGSSF)
10 µA
Gate Leakage Current, Reverse (IGSSR)
1 µA
Gate Leakage Current, Reverse (IGSSR)
10 µA
Gate Threshold Voltage (VGS(th))
0.5 — 1.1 V
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.24 nC
Gate-Drain Charge (Qgd)
0.36 nC
Gate-Source Charge (Qgs)
0.17 nC
Gate-Source Charge (Qgs)
0.24 nC
Gate-Source Voltage (VGS)
8 V
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
1.3 A
Maximum Pulsed Drain Current (IDM)
1 A
Power Dissipation (PD)
350 mW
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
150 mW
Saturation Drain Current (IDSS)
100 nA
Saturation Drain Current (IDSS)
100 nA
Static Drain-Source On Resistance (rDS(ON))
230 mΩ

(140 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
275 mΩ

(200 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
700 mΩ
Static Drain-Source On Resistance (rDS(ON))
360 mΩ

(250 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
500 mΩ

(370 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
800 mΩ
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
1.58 nC
Total Gate Charge (Qg)
1.2 nC
Turn Off Time (toff)
25 ns
Turn Off Time (toff)
48 ns
Turn On Time (ton)
10 ns
Turn On Time (ton)
38 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMLDM7585 BK Box@5,000 Active Surface mount MOSFET 650mA,20V Dual: N-Channel/P-Channel MOSFET&650mA,20V EAR99 8541.21.0095 PBFREE
CMLDM7585 TR Tape & Reel@3,000 Active Surface mount MOSFET 650mA,20V Dual: N-Channel/P-Channel MOSFET&650mA,20V EAR99 8541.21.0095 TIN

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CMLDM7585.PDF Device Datasheet
Material Composition:SOT-563 Material Composition
Package Detail Document:SOT-563 Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-563 Process Change Notice
Process Change Notice:SOT-563 Alternate Lead Frame Process Change Notice
Product Reliability Data:SOT-563 Package Reliability Product Reliability Data
Spice Model:Spice Model CMLDM7585_NCHAN Spice Model
Spice Model:Spice Model CMLDM7585_PCHAN Spice Model