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CMLDM8120

860mA,20V Surface mount MOSFET P-Channel Enhancement Mode

Case Type: SOT-563

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current (ID)
860 mA
Continuous Drain Current (ID)
950 mA
Continuous Source Current (Body Diode) (IS)
360 mA
Diode Forward On Voltage (VSD)
900 mV
Drain-Source Breakdown Voltage (BVDSS)
20 V

(24 V Typical)

Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
2 S
Gate Leakage Current, Forward (IGSSF)
50 nA

(1 nA Typical)

Gate Leakage Current, Reverse (IGSSR)
50 nA

(1 nA Typical)

Gate Threshold Voltage (VGS(th))
0.45 — 1 V

(0.76 V Typical)

Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
4 A
Maximum Pulsed Source Current (ISM)
4 A
Power Dissipation (PD)
350 mW
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
150 mW
Saturation Drain Current (IDSS)
500 nA

(5 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
150 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
142 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
200 mΩ

(130 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
240 mΩ

(190 mΩ Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
25 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMLDM8120 BK Box@5,000 Active 860mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 PBFREE
CMLDM8120 TR Tape & Reel@3,000 Active 860mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 PBFREE
CMLDM8120G BK Box@5,000 Active 860mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 PBFREE
CMLDM8120G TR Tape & Reel@3,000 Active 860mA,20V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.21.0095 TIN

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CMLDM8120.PDF Device Datasheet
Material Composition:SOT-563 Material Composition
Package Detail Document:SOT-563 Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-563 Process Change Notice
Process Change Notice:SMD MOSFET Halogen Free Mold Process Change Notice
Process Change Notice:SOT-563 Alternate Lead Frame Process Change Notice
Product Reliability Data:SOT-563 Package Reliability Product Reliability Data
Spice Model:Spice Model CMLDM8120 Spice Model

Product Support

Contact Product Support

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Supply management (Customer portals)
  • Inventory bonding
  • Consolidated shipping options
  • Custom bar coding for shipments
  • Custom product packing

Design Support

Contact Design Support

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Free quick ship samples (2nd day air)
  • Online technical data and parametric search
  • SPICE models
  • Custom electrical curves
  • Environmental regulation compliance
  • Customer specific screening
  • Up-screening capabilities
  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development