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CMLM0708A

Surface mount MOSFET 280mA,60V Dual: N-Channel/P-Channel MOSFET&280mA,50V

Case Type: SOT-563

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
50 pF
Common Source Input Capacitance (Ciss)
70 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Drain Current (ID)
280 mA
Continuous Drain Current (ID)
280 mA
Continuous Source Current (Body Diode) (IS)
280 mA
Continuous Source Current (Body Diode) (IS)
280 mA
Diode Forward On Voltage (VSD)
1.2 V
Diode Forward On Voltage (VSD)
1.3 V
Drain-Gate Voltage (VDG)
60 V
Drain-Gate Voltage (VDG)
50 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source On Voltage (VDS(ON))
1 V
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source On Voltage (VDS(ON))
1.5 V
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source Voltage (VDS)
60 V
Drain-Source Voltage (VDS)
50 V
Forward Transconductance (gFS)
80 mS
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate-Drain Charge (Qgd)
0.148 nC
Gate-Drain Charge (Qgd)
0.16 nC
Gate-Source Charge (Qgs)
0.196 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
40 V
Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
1.5 A
Maximum Pulsed Drain Current (IDM)
1.5 A
Maximum Pulsed Source Current (ISM)
1.5 A
Maximum Pulsed Source Current (ISM)
1.5 A
On State Drain Current (ID(ON))
500 mA
On State Drain Current (ID(ON))
500 mA
Power Dissipation (PD)
350 mW
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
150 mW
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
3.5 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
2.5 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
0.592 nC
Total Gate Charge (Qg)
0.72 nC
Turn Off Time (toff)
20 ns
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMLM0708A BK Box@5,000 Active Surface mount MOSFET 280mA,60V Dual: N-Channel/P-Channel MOSFET&280mA,50V EAR99 8541.21.0095 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CMLM0708A.PDF Device Datasheet
Material Composition:SOT-563 Material Composition
Package Detail Document:SOT-563 Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-563 Process Change Notice
Process Change Notice:SOT-563 Alternate Lead Frame Process Change Notice
Product Reliability Data:SOT-563 Package Reliability Product Reliability Data
Spice Model:Spice Model CMLM0708A_NCHAN Spice Model
Spice Model:Spice Model CMLM0708A_PCHAN Spice Model