CMPDM202PH

2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current

Case Type: SOT-23F

Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
75 pF
Common Source Reverse Transfer Capacitance (Crss)
85 pF
Continuous Drain Current (ID)
2.3 A
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
15 S
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.6 — 1.4 V
Gate-Drain Charge (Qgd)
3.5 nC

(2.3 nC Typical)

Gate-Source Charge (Qgs)
2 nC

(1.3 nC Typical)

Gate-Source Voltage (VGS)
12 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
9.2 A
Power Dissipation (PD)
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.088 Ω

(0.042 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
0.093 Ω

(0.058 Ω Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
12 nC

(8 nC Typical)

Turn Off Time (toff)
48 ns
Turn On Time (ton)
25 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMPDM202PH BK Box@3,500 Discontinued 2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE
CMPDM202PH TR Tape & Reel@3,000 Discontinued 2.3A,20V Surface mount MOSFET P-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CMPDM202PH.PDF Device Datasheet
Material Composition:SOT-23F Material Composition
Package Detail Document:SOT-23F Package Detail Document
Product EOL Notice:CMPDM202PH Product EOL Notice

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