CTLDM7120-M832DS

1A,20V Surface mount MOSFET Dual N-Channel Enhancement Mode

Case Type: TLM832DS

Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current (ID)
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
4.2 S
Gate Leakage Current, Forward (IGSSF)
10 µA
Gate Leakage Current, Reverse (IGSSR)
10 µA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
4 A
Power Dissipation (PD)
1.65 W
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
100 mΩ

(75 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
140 mΩ

(100 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
250 mΩ

(170 mΩ Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
76 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CTLDM7120-M832DS BK Box@5,000 Discontinued 1A,20V Surface mount MOSFET Dual N-Channel Enhancement Mode EAR99 8541.29.0095 PBFREE
CTLDM7120-M832DS TR Tape & Reel@3,000 Discontinued 1A,20V Surface mount MOSFET Dual N-Channel Enhancement Mode EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CTLDM7120-M832DS.PDF Device Datasheet
Material Composition:TLM832DS Material Composition
Package Detail Document:TLM832DS Package Detail Document
Product EOL Notice:TLM832DS CASE Product EOL Notice

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