CTLDM7181-M832D

Surface mount MOSFET Dual: N-Channel/P-Channel MOSFET

Case Type: TLM832D

Common Source Input Capacitance (Ciss)
220 pF
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current (ID)
1 A
Continuous Drain Current (ID)
860 mA
Continuous Drain Current (ID)
950 mA
Continuous Source Current (Body Diode) (IS)
360 mA
Diode Forward On Voltage (VSD)
1.1 V
Diode Forward On Voltage (VSD)
900 mV
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Breakdown Voltage (BVDSS)
20 V

(24 V Typical)

Drain-Source Voltage (VDS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
4.2 S
Forward Transconductance (gFS)
2 S
Gate Leakage Current, Forward (IGSSF)
10 µA
Gate Leakage Current, Forward (IGSSF)
0.05 µA

(0.001 µA Typical)

Gate Leakage Current, Reverse (IGSSR)
10 µA
Gate Leakage Current, Reverse (IGSSR)
0.05 µA

(0.001 µA Typical)

Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate Threshold Voltage (VGS(th))
0.45 — 1 V

(0.76 V Typical)

Gate-Drain Charge (Qgd)
0.65 nC
Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
4 A
Maximum Pulsed Drain Current (IDM)
4 A
Maximum Pulsed Source Current (ISM)
4 A
Power Dissipation (PD)
1.65 W
Saturation Drain Current (IDSS)
0.5 µA

(0.005 µA Typical)

Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
100 mΩ

(75 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
140 mΩ

(100 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
250 mΩ

(170 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
150 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
142 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
200 mΩ

(130 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
240 mΩ

(190 mΩ Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
76 °C/W
Total Gate Charge (Qg)
2.4 nC
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
140 ns
Turn Off Time (toff)
25 ns
Turn On Time (ton)
25 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CTLDM7181-M832D TR Tape & Reel@3,000 Discontinued Surface mount MOSFET Dual: N-Channel/P-Channel MOSFET EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CTLDM7181-M832D.PDF Device Datasheet
Package Detail Document:TLM832D Package Detail Document
Process Change Notice:TLM832D Leadframe change from Process Change Notice
Product EOL Notice:BLANKET PDN-ALL OTHER PRODUCTS Product EOL Notice

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