CTLDM8002A-M621H

280mA,50V Surface mount MOSFET P-Channel Enhancement Mode

Case Type: TLM621H

Common Source Input Capacitance (Ciss)
70 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Drain Current (ID)
280 mA
Continuous Source Current (Body Diode) (IS)
280 mA
Diode Forward On Voltage (VSD)
1.3 V
Drain-Gate Voltage (VDG)
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source On Voltage (VDS(ON))
1.5 V
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source Voltage (VDS)
50 V
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate-Drain Charge (Qgd)
0.16 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
1.5 A
Maximum Pulsed Source Current (ISM)
1.5 A
On State Drain Current (ID(ON))
500 mA
Power Dissipation (PD)
1.6 W
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Static Drain-Source On Resistance (rDS(ON))
2.5 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
75 °C/W
Total Gate Charge (Qg)
0.72 nC
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CTLDM8002A-M621H BK Box@5,000 Discontinued 280mA,50V Surface mount MOSFET P-Channel Enhancement Mode EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Copper Alloy Leadframe Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CTLDM8002A-M621H.PDF Device Datasheet
Material Composition:TLM621H Material Composition
Package Detail Document:TLM621H Package Detail Document
Product EOL Notice:TLM621/H Case Product EOL Notice

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