Home / Products / Semiconductors / MOSFETs/JFETs / MOSFETs / CTLDM8120-M832DS

CTLDM8120-M832DS

860mA,20V Surface mount MOSFET Dual P-Channel Enhancement Mode

Case Type: TLM832DS

Back to Top Specifications Ordering Resources Support

Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current (ID)
860 mA
Continuous Drain Current (ID)
950 mA
Continuous Source Current (Body Diode) (IS)
360 mA
Diode Forward On Voltage (VSD)
900 mV
Drain-Source Breakdown Voltage (BVDSS)
20 V

(24 V Typical)

Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
2 S
Gate Leakage Current, Forward (IGSSF)
50 nA

(1 nA Typical)

Gate Leakage Current, Reverse (IGSSR)
50 nA

(1 nA Typical)

Gate Threshold Voltage (VGS(th))
0.45 — 1 V

(0.76 V Typical)

Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
4 A
Maximum Pulsed Source Current (ISM)
4 A
Power Dissipation (PD)
1.65 W
Saturation Drain Current (IDSS)
500 nA

(5 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
150 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
142 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
200 mΩ

(130 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
240 mΩ

(190 mΩ Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
76 °C/W
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
25 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CTLDM8120-M832DS BK Box@5,000 Discontinued 860mA,20V Surface mount MOSFET Dual P-Channel Enhancement Mode EAR99 8541.29.0095 PBFREE
CTLDM8120-M832DS TR Tape & Reel@3,000 Discontinued 860mA,20V Surface mount MOSFET Dual P-Channel Enhancement Mode EAR99 8541.29.0095 PBFREE

Resources

Item Type
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CTLDM8120-M832DS.PDF Device Datasheet
Material Composition:TLM832DS Material Composition
Package Detail Document:TLM832DS Package Detail Document
Product EOL Notice:TLM832DS CASE Product EOL Notice

Product Support

Contact Product Support

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Supply management (Customer portals)
  • Inventory bonding
  • Consolidated shipping options
  • Custom bar coding for shipments
  • Custom product packing

Design Support

Contact Design Support

AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Free quick ship samples (2nd day air)
  • Online technical data and parametric search
  • SPICE models
  • Custom electrical curves
  • Environmental regulation compliance
  • Customer specific screening
  • Up-screening capabilities
  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development