CWDM408P8N

13.5A,40V Surface mount MOSFET N-Channel Enhancement Mode High Current

Case Type: SOIC-8

Continuous Drain Current (ID)
13.5 A
Continuous Drain Current (ID)
8.8 A
Diode Forward On Voltage (VSD)
1.6 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage (VDS)
40 V
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3.1 V

(1.4 V Typical)

Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 150 °C
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
11 mΩ

(4 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
13 mΩ

(5.6 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
50 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CWDM408P8N BK Box@350 Special Order Item 13.5A,40V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE
CWDM408P8N TR13 Tape & Reel@2,500 Special Order Item 13.5A,40V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
Material Composition:SOIC-8 Material Composition
Package Detail Document:SOIC-8 Package Detail Document
Product Reliability Data:SOIC-8 Package Reliability Product Reliability Data

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