CWDM609P8N

13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current

Case Type: SOIC-8

Continuous Drain Current (ID)
13 A
Continuous Drain Current (ID)
9.8 A
Diode Forward On Voltage (VSD)
1.6 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source Voltage (VDS)
60 V
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4.1 V

(2.82 V Typical)

Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 150 °C
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
14 mΩ

(8.4 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
50 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CWDM609P8N BK Box@350 Special Order Item 13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE
CWDM609P8N TR13 Tape & Reel@2,500 Special Order Item 13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
Material Composition:SOIC-8 Material Composition
Package Detail Document:SOIC-8 Package Detail Document
Product Reliability Data:SOIC-8 Package Reliability Product Reliability Data

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