CWDM609P8N

13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current

Case Type: SOIC-8

Continuous Drain Current (I_D)

13 A

Continuous Drain Current (I_D)

9.8 A

Diode Forward On Voltage (V_SD)

1.6 V

Drain-Source Breakdown Voltage (BV_DSS)

60 V

Drain-Source Voltage (V_DS)

60 V

Gate Leakage Current, Forward (I_GSSF)

100 nA

Gate Leakage Current, Reverse (I_GSSR)

100 nA

Gate Threshold Voltage (V_GS(th))

2 — 4.1 V

(2.82 V Typical)

Gate-Source Voltage (V_GS)

20 V

Junction Temperature (T_j)

-55 — 150 °C

Saturation Drain Current (I_DSS)

1 µA

Static Drain-Source On Resistance (r_DS(ON))

14 mΩ

(8.4 mΩ Typical)

Storage Temperature (T_stg)

-55 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

50 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CWDM609P8N BK	Box@350		Special Order Item	13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current	EAR99	8541.21.0095	PBFREE
CWDM609P8N TR13	Tape & Reel@2,500		Special Order Item	13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Lead frame	Analytical Test Report
Analytical Test Report:Wire	Analytical Test Report
Material Composition:SOIC-8	Material Composition
Package Detail Document:SOIC-8	Package Detail Document
Product Reliability Data:SOIC-8 Package Reliability	Product Reliability Data