CCSPG0420N

20A,40V Surface mount MOSFET N-Channel GaN

Case Type: CSP2X2

Common Source Input Capacitance (Ciss)
886.5 pF
Common Source Output Capacitance (Coss)
381.2 pF
Common Source Reverse Transfer Capacitance (Crss)
226.4 pF
Continuous Drain Current (ID)
20 A
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage (VDS)
40 V
Gate Leakage Current, Reverse (IGSSR)
30 µA
Gate Leakage Current, Reverse (IGSSR)
40 µA
Gate Threshold Voltage (VGS(th))
0.8 — 2.4 V
Gate-Drain Charge (Qgd)
8.6 nC
Gate-Source Charge (Qgs)
1.9 nC
Gate-Source Voltage (VGS)
6 V
Junction Temperature (Tj)
-40 — 125 °C
Maximum Pulsed Drain Current (IDM)
100 A
Saturation Drain Current (IDSS)
20 µA
Static Drain-Source On Resistance (rDS(ON))
4.8 mΩ

(4 mΩ Typical)

Storage Temperature (Tstg)
-40 — 125 °C
Total Gate Charge (Qg)
15.8 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CCSPG0420N TR Tape & Reel@2,500 Active 20A,40V Surface mount MOSFET N-Channel GaN EAR99 8541.21.0095 PBFREE

Resources

Package Detail Document:CSP2X2 TR Package Detail Document
Product Brief:New GaN FETs Product Brief

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