CCSPG0420N

20A,40V Surface mount MOSFET N-Channel GaN

Case Type: CSP2X2

Common Source Input Capacitance (C_iss)

886.5 pF

Common Source Output Capacitance (C_oss)

381.2 pF

Common Source Reverse Transfer Capacitance (C_rss)

226.4 pF

Continuous Drain Current (I_D)

20 A

Drain-Source Breakdown Voltage (BV_DSS)

40 V

Drain-Source Voltage (V_DS)

40 V

Gate Leakage Current, Reverse (I_GSSR)

30 µA

Gate Leakage Current, Reverse (I_GSSR)

40 µA

Gate Threshold Voltage (V_GS(th))

0.8 — 2.4 V

Gate-Drain Charge (Q_gd)

8.6 nC

Gate-Source Charge (Q_gs)

1.9 nC

Gate-Source Voltage (V_GS)

6 V

Junction Temperature (T_j)

-40 — 125 °C

Maximum Pulsed Drain Current (I_DM)

100 A

Saturation Drain Current (I_DSS)

20 µA

Static Drain-Source On Resistance (r_DS(ON))

4.8 mΩ

(4 mΩ Typical)

Storage Temperature (T_stg)

-40 — 125 °C

Total Gate Charge (Q_g)

15.8 nC

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CCSPG0420N TR	Tape & Reel@2,500		Active	20A,40V Surface mount MOSFET N-Channel GaN	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Package Detail Document:CSP2X2 TR	Package Detail Document
Product Brief:New GaN FETs	Product Brief