CCSPG0450N

50A,40V Surface mount MOSFET N-Channel GaN

Case Type: CSP5X4

Common Source Input Capacitance (Ciss)
3500 pF
Common Source Output Capacitance (Coss)
1600 pF
Common Source Reverse Transfer Capacitance (Crss)
100 pF
Continuous Drain Current (ID)
50 A
Diode Forward On Voltage (VSD)
1.25 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage (VDS)
40 V
Effective Output Capacitance, Energy Related (Coss(er))
2500 pF
Effective Output Capacitance, Time Related (Coss(tr))
2900 pF
Gate Leakage Current, Forward (IGSSF)
800 µA

(0.04 µA Typical)

Gate Leakage Current, Reverse (IGSSR)
400 µA

(0.04 µA Typical)

Gate Threshold Voltage (VGS(th))
0.7 — 2.3 V

(1.1 V Typical)

Gate-Drain Charge (Qgd)
4.6 nC
Gate-Source Charge (Qgs)
6.2 nC
Gate-Source Voltage (VGS)
-4 — 6 V
Junction Temperature (Tj)
-40 — 150 °C
Maximum Pulsed Drain Current (IDM)
200 A
Saturation Drain Current (IDSS)
900 µA
Static Drain-Source On Resistance (rDS(ON))
1.5 mΩ

(1.2 mΩ Typical)

Storage Temperature (Tstg)
-40 — 150 °C
Total Gate Charge (Qg)
28 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CCSPG0450N TR Tape & Reel@2,500 Active 50A,40V Surface mount MOSFET N-Channel GaN EAR99 8541.21.0095 PBFREE

Resources

Package Detail Document:CSP5X4 TR Package Detail Document
Product Brief:New GaN FETs Product Brief

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