CCSPG1060N

60A,100V Surface mount MOSFET N-Channel GaN

Case Type: CSP3.5X2

Common Source Input Capacitance (Ciss)
1000 pF
Common Source Output Capacitance (Coss)
460 pF
Common Source Reverse Transfer Capacitance (Crss)
8.2 pF
Continuous Drain Current (ID)
60 A
Diode Forward On Voltage (VSD)
2.3 V
Drain-Source Breakdown Voltage (BVDSS)
100 V
Drain-Source Voltage (VDS)
100 V
Effective Output Capacitance, Energy Related (Coss(er))
700 pF
Effective Output Capacitance, Time Related (Coss(tr))
1020 pF
Gate Leakage Current, Forward (IGSSF)
5000 µA

(20 µA Typical)

Gate Leakage Current, Reverse (IGSSR)
400 µA

(60 µA Typical)

Gate Threshold Voltage (VGS(th))
0.8 — 2.5 V

(1.1 V Typical)

Gate-Drain Charge (Qgd)
1.9 nC
Gate-Source Charge (Qgs)
1.7 nC
Gate-Source Voltage (VGS)
-4 — 6 V
Junction Temperature (Tj)
-40 — 150 °C
Power Dissipation (PD)
1.1 W
Saturation Drain Current (IDSS)
350 µA
Static Drain-Source On Resistance (rDS(ON))
5.5 mΩ

(2.4 mΩ Typical)

Storage Temperature (Tstg)
-40 — 150 °C
Total Gate Charge (Qg)
9.2 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CCSPG1060N TR Tape & Reel@1,500 Active 60A,100V Surface mount MOSFET N-Channel GaN EAR99 8541.29.0095 PBFREE

Resources

Material Composition:CSP3.5X2 Material Composition
Package Detail Document:CSP3.5X2 TR Package Detail Document
Product Brief:New GaN FETs Product Brief
Spice Model:CCSPG1060N Spice Model
Step File 3D Object:CSP3.5X2 Case Step File 3D Object

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