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CCSPG1510N

100A,150V Surface mount MOSFET N-Channel GaN

Case Type: CSP4X6

Device Datasheet

Technical Specifications

Common Source Input Capacitance (C_iss)

2200 pF

Common Source Output Capacitance (C_oss)

900 pF

Common Source Reverse Transfer Capacitance (C_rss)

10.5 pF

Continuous Drain Current (I_D)

100 A

Diode Forward On Voltage (V_SD)

1.5 V

Drain-Source Breakdown Voltage (BV_DSS)

150 V

Drain-Source Voltage (V_DS)

150 V

Effective Output Capacitance, Energy Related (C_oss(er))

1300 pF

Effective Output Capacitance, Time Related (C_oss(tr))

1700 pF

Gate Leakage Current, Forward (I_GSSF)

100 µA

(2 µA Typical)

Gate Leakage Current, Forward (I_GSSF)

1000 µA

(6 µA Typical)

Gate Leakage Current, Reverse (I_GSSR)

100 µA

(0.1 µA Typical)

Gate Resistance (R_g)

2 Ω

Gate Threshold Voltage (V_GS(th))

0.8 — 2.1 V

(1.1 V Typical)

Gate-Drain Charge (Q_gd)

3.5 nC

Gate-Source Charge (Q_gs)

5 nC

Gate-Source Voltage (V_GS)

-4 — 6 V

Junction Temperature (T_j)

-40 — 150 °C

Output Charge (Q_oss)

130 nC

Power Dissipation (P_D)

0.2 W

Saturation Drain Current (I_DSS)

150 µA

(2 µA Typical)

Static Drain-Source On Resistance (r_DS(ON))

3.9 mΩ

(3.2 mΩ Typical)

Storage Temperature (T_stg)

-40 — 150 °C

Threshold Gate Charge (Q_G(TH))

3 nC

Total Gate Charge (Q_g)

20 nC

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CCSPG1510N BK	Box@500		Active	100A,150V Surface mount MOSFET N-Channel GaN	EAR99	8541.21.0095	PBFREE
CCSPG1510N TR	Tape & Reel@2,500		Active	100A,150V Surface mount MOSFET N-Channel GaN	EAR99	8541.21.0095	PBFREE

Resources


Item	Type
No matching documents found.
Package Detail Document:CSP4X6	Package Detail Document
Product Brief:New GaN FETs	Product Brief
Spice Model:CCSPG1510N	Spice Model