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CCSPG1560N

60A,150V Surface mount MOSFET N-Channel GaN

Case Type: CSP4X6

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
1450 pF
Common Source Output Capacitance (Coss)
525 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Drain Current (ID)
60 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
150 V
Drain-Source Voltage (VDS)
150 V
Effective Output Capacitance, Energy Related (Coss(er))
740 pF
Effective Output Capacitance, Time Related (Coss(tr))
1000 pF
Gate Leakage Current, Forward (IGSSF)
100 µA

(1.5 µA Typical)

Gate Leakage Current, Forward (IGSSF)
1000 µA

(4 µA Typical)

Gate Leakage Current, Reverse (IGSSR)
100 µA

(0.1 µA Typical)

Gate Resistance (Rg)
2 Ω
Gate Threshold Voltage (VGS(th))
0.8 — 2.1 V

(1.1 V Typical)

Gate-Drain Charge (Qgd)
2 nC
Gate-Source Charge (Qgs)
3 nC
Gate-Source Voltage (VGS)
-4 — 6 V
Junction Temperature (Tj)
-40 — 150 °C
Output Charge (Qoss)
75 nC
Power Dissipation (PD)
0.2 W
Saturation Drain Current (IDSS)
150 µA

(1.5 µA Typical)

Static Drain-Source On Resistance (rDS(ON))
7 mΩ

(5.4 mΩ Typical)

Storage Temperature (Tstg)
-40 — 150 °C
Threshold Gate Charge (QG(TH))
1.5 nC
Total Gate Charge (Qg)
13 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CCSPG1560N BK Box@500 Active 60A,150V Surface mount MOSFET N-Channel GaN EAR99 8541.21.0095 PBFREE
CCSPG1560N TR Tape & Reel@2,500 Active 60A,150V Surface mount MOSFET N-Channel GaN EAR99 8541.21.0095 PBFREE

Resources

Item Type
Package Detail Document:CSP4X6 Package Detail Document
Product Brief:New GaN FETs Product Brief
Spice Model:CCSPG1560N Spice Model

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