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CDFG6517N

17A,650V Surface mount MOSFET N-Channel GaN

Case Type: DFN8X8

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
125 pF
Common Source Output Capacitance (Coss)
41 pF
Common Source Reverse Transfer Capacitance (Crss)
0.4 pF
Continuous Drain Current (ID)
17 A
Diode Forward On Voltage (VSD)
2.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage (VDS)
650 V
Effective Output Capacitance, Energy Related (Coss(er))
59 pF
Effective Output Capacitance, Time Related (Coss(tr))
82 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
70 µA
Gate Leakage Current, Reverse (IGSSR)
70 µA
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V

(1.7 V Typical)

Gate-Drain Charge (Qgd)
1.2 nC
Gate-Source Charge (Qgs)
0.3 nC
Gate-Source Voltage (VGS)
-1.4 — 7 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
32 A
Power Dissipation (PD)
1.1 W
Power Dissipation (PD)
113 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
25 µA

(0.6 µA Typical)

Static Drain-Source On Resistance (rDS(ON))
140 mΩ

(106 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
3.5 nC
Turn-off Delay Time (tOFF)
4 ns
Turn-on Delay Time (tON)
3 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDFG6517N TR13 Tape & Reel@2,500 Active 17A,650V Surface mount MOSFET N-Channel GaN EAR99 8541.29.0095 PBFREE

Resources

Item Type
Product Brief:New GaN FETs Product Brief
Spice Model:CDFG6517N Spice Model

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